埋置InGaSb量子阱通道与原位MBE生长栅氧化物的迁移和散射机制

70th Device Research Conference Pub Date : 2012-06-18 DOI:10.1109/DRC.2012.6256973

S. Madisetti, P. Nagaiah, T. Chidambaram, V. Tokranov, M. Yakimov, S. Oktyabrsky

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引用次数: 0

摘要

InGaSb材料家族具有较高的空穴传输特性，是III-V族CMOS电路的潜在候选材料。了解主要散射机制对未来高速、低功耗器件应用的发展至关重要。我们给出了p型InGaSb量子阱(QW)通道的霍尔迁移率数据，并推导了与这些结构中降低迁移率的界面和捕获电荷相关的主要散射机制。

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Mobility and scattering mechanisms in buried InGaSb quantum well channels integrated with in-situ MBE grown gate oxide

InGaSb material family with its higher hole transport properties are potential candidates for group III-V CMOS circuits. Understanding of the dominant scattering mechanisms is crucial for the development of future high speed, low power device applications. We present Hall mobility data of p-type InGaSb quantum well (QW) channels and derive the dominant scattering mechanisms related to the interface and trapped charges that degrade mobility in these structures.

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70th Device Research Conference

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