二氧化硅衬底上石墨烯mosfet中随环境变化的迁移率退化机制

2012 IEEE Silicon Nanoelectronics Workshop (SNW) Pub Date : 2012-06-10 DOI:10.1109/SNW.2012.6243362

Y. G. Lee, C. Kang, C. Cho, Y. H. Kim, H. Hwang, J. J. Kim, U. Jung, E. Park, M. W. Kim, B. H. Lee

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引用次数: 0

摘要

确定了影响SiO2衬底上石墨烯MOSFET器件不稳定性和迁移率退化的两种不同机制及其时间常数(40μsec和~ 370μsec)。石墨烯表面的氧/水反应被认为是导致器件迁移率下降和器件不稳定的器件滞后的主要来源。

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Mechanisms of ambient dependent mobility degradation in the graphene MOSFETs on SiO2 substrate

Two different mechanisms affecting the device instability and mobility degradation at graphene MOSFET on SiO2 substrate and their time constant, 40μsec and ~ 370μsec, have been identified. Oxygen/H2O reaction at the surface of graphene was identified as a major source of device hysteresis causing mobility degradation and device instability.

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来源期刊

2012 IEEE Silicon Nanoelectronics Workshop (SNW)

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