基于TLP技术的集成电路ESD保护结构失效分析

Jiang Xie, Q. Shi, Yue Gao
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引用次数: 2

摘要

介绍了一种基于传输线脉冲测试(TLP)的集成电路端口保护结构烧毁机理评估方法。在分析集成电路中各种典型的ESD保护电路结构的基础上,给出了TLP测试方案的设计步骤。通过建立I/V特性曲线与保护电路ESD损伤失效之间的函数关系,可以准确量化集成电路ESD损伤的程度和后果,并确定其根本原因。通过对典型0.18μm工艺的夹紧保护结构进行失效分析,验证了该技术的可行性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Integrated circuit ESD protection structure failure analysis based on TLP technique
This paper introduces an evaluation method of integrated circuit port protection structure burn-out mechanism basing on transmission line pulse test (TLP). Based on the analysis of a variety of typical ESD protection circuit structures of integrated circuit, the design procedure of TLP test scheme is provided. By establishing functional relation between I/V characteristic curves and the ESD damage failure of protection circuit, the level and consequence of integrated circuit ESD failure can be quantified precisely, the root causes also can be confirmed. With a failure analysis case of a typical clamp protection structure of 0.18μm process verifies the feasibility of the technique.
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