半导体表面的光激发载流子动力学的时间、空间分解计测;半导体表面的光激发载流子动力学的时间、空间分解计测;光电generated Spatio-temporal Observation Carrier Dynamics on a Semiconductor Surface

Journal of The Vacuum Society of Japan Pub Date : 2017-10-01 DOI:10.3131/JVSJ2.60.388

K. Fukumoto

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摘要

开发了一种飞秒激光脉冲时间分辨光电电子显微镜(TRPEEM)系统，用于探索半导体表面的光生电子动力学。获得的空间和时间分辨率分别为100 nm和100 fs。本文介绍了TRPEEM系统，并报道了在半导体表面随机分布的diŠerent纳米级结构缺陷中diŠerent光生电子寿命的观察。基于Schockley-Read-Hall (SRH)模型解释了载流子复合时间与缺陷态密度之间的关系。的

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半導体表面における光励起キャリアダイナミクスの時間・空間分解計測;半導体表面における光励起キャリアダイナミクスの時間・空間分解計測;Spatio-temporal Observation of Photogenerated Carrier Dynamics on a Semiconductor Surface

27, 2017, Accepted June 20, 2017 ) A system for time-resolved photoemission electron microscopy ( TR  PEEM ) conducted with femtosecond laser pulses has been de-veloped to explore the photogenerated electron dynamics on semiconductor surfaces. Attained space and time resolutions were 100 nm and 100 fs, respectively. The present manuscript introduces the TR  PEEM system, and also reports the observation of diŠerent photogenerated electron lifetimes in diŠerent nanoscale structural defects randomly distributed on a semiconductor surface. The results were explained based on Schockley-Read-Hall ( SRH ) model relating the carrier recombination time and the defect state density. The

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Journal of The Vacuum Society of Japan

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