替代介质中介电松弛损耗的比较研究

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) Pub Date : 2001-12-02 DOI:10.1109/IEDM.2001.979481

Hans Reisinger, G. Steinlesberger, S. Jakschik, M. Gutsche, T. Hecht, M. Leonhard, Uwe Schröder, H. Seidl, D. Schumann

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引用次数: 60

摘要

这项工作旨在引起人们对介电松弛效应的关注，介电松弛效应严重影响DRAM存储电容器中替代介电体的性能以及mosfet的栅极介电体的性能。对标准绝缘体的介电松弛损耗与大多数提出的高K介电体的介电松弛损耗进行了比较。

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A comparative study of dielectric relaxation losses in alternative dielectrics

This work is intended to draw attention to the effect of dielectric relaxation which is shown to severely influence the performance of alternative dielectrics in DRAM storage capacitors as well as of the gate dielectrics of MOSFETs. A comparison of the dielectric relaxation losses in standard insulators with those in most proposed high K dielectrics is presented.

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International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)

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