未来对撞机的单环离壳衰变h∗→zz

K. H. Phan, D. Tran, Anh Thu Nguyen
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引用次数: 0

摘要

在标准模型框架下,我们给出了在Hooft-Veltmangauge中贡献HZZ顶点的单回路公式。研究了Z玻色子在非极化和纵向极化状态下对Z对的单环离壳希格斯衰变速率。当我们将离壳粒子希格斯质量从200 GeV改变到500 GeV时,修正范围为7%到8.4%。在应用方面,我们研究了未来对撞机中希格斯产生的信号过程γ∗(Q2)γ→H∗→ZZ和e−γ→e−H∗→e−ZZ中的离壳希格斯衰变H∗→ZZ。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
ONE-LOOP OFF-SHELL DECAY H∗ → ZZ AT FUTURE COLLIDERS
We present one-loop formulas for contributing to the HZZ vertex in ’t Hooft-Veltmangauge within Standard Model framework. One-loop off-shell Higgs decay rates to Z-pair areinvestigated in both unpolarized and longitudinal polarization for Z bosons in final state. Thecorrections are range of 7% to 8.4% when we vary the off-shell Higgs mass from 200 GeV to500 GeV. In applications, we study off-shell Higgs decay H ∗ → ZZ in the Higgs productions atfuture colliders such as the signal processes γ ∗ (Q2 )γ → H ∗ → ZZ and e− γ → e− H ∗ → e− ZZ areanalyzed.
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