氢对射频溅射沉积GaAs(Ti)薄膜光学吸收响应的影响

A. Boronat, S. Silvestre, L. Castañer
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引用次数: 0

摘要

本文研究了在不同H2分压下,射频溅射技术沉积的GaAs(Ti)薄膜的光吸收行为。在以前的工作中,我们已经证明了获得高剂量Ti的GaAs薄膜的可行性,我们称之为GaAs(Ti)。任何吸收峰,可能与中间波段的存在有关,已被确定。较低的Etauc参数和较宽的乌尔巴赫尾使我们怀疑可能存在的吸收峰可能被隐藏起来。在溅射GaAs薄膜上加入H2之前,已经证明了Etauc参数向更高值的移动和Urbach尾的减小。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Influence of hydrogen on the optical absorption response of GaAs(Ti) films deposited by R.F. sputtering
In the present work we have investigated the optical absorption behavior of GaAs(Ti) films deposited by r.f sputtering technique under different H2 partial pressures. In previous work we have already demonstrated the feasibility to obtain GaAs films with high dose of Ti, which we refer to as GaAs(Ti). Any absorption peak, which could be related with the presence of an intermediate band, has been identified. The low Etauc parameter together with a broad Urbach tail of the films make us to suspect that the possible presence of an absorption peak could be hidden. The incorporation of H2 on sputtered GaAs films have demonstrated before a shift of the Etauc parameter to higher values and a reduction of the Urbach tail.
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