Charge recombination suppressed CdSeS/CdSe/ZnS QDSSC design

he interest in quantum sensitized solar cells (QDSSC), which theoretically to up to energy con version is it has theoretically high efficiency value, obtained in studies with QDSSCs is far these This shows that there are many difficulties to be solved in QDSSC technology. One of the main challenges in QDSSC technology is irradiated load recombination occurring in QDSSC. For this reason, in this study, it is about using CdSeS QDs as an alternative to the most used CdS QDs in the literature in order to supp ress the load recombination between TiO 2 surface and electrolyte and QD surfaces. In the study, while CdS and CdSeS QDs were coated on the TiO 2 surface with SILAR method, the previously synthesized CdSe QD was coated with chemical deep deposition method. Surfaces were last treated with ZnS QDs. An optimization study was carried out to determine the ideal number of CdSeS coatings for QDSSCs. As a result, the Jsc and Voc values for TiO 2 /CdSeS 4 /CdSe/ZnS QDSSCs were 8.799 mA/ cm 2 and 0.795 V, respectively, while the PCE value increased to 4.452%.