R. Klieber, R. Ramisch, Robert Weigel, M. Schwab, R. Dill, A. Valenzuela, Peter Russer
{"title":"6.5 GHz高温超导谐振腔稳定共面混合集成振荡器","authors":"R. Klieber, R. Ramisch, Robert Weigel, M. Schwab, R. Dill, A. Valenzuela, Peter Russer","doi":"10.1109/IEDM.1991.235275","DOIUrl":null,"url":null,"abstract":"A small-size coplanar oscillator has been designed and entirely fabricated on a 10-mm*10-mm/sup 2/ LaAlO/sub 3/ substrate in superconducting microwave integrated circuit (SMIC) technology. As an active element, a GaAs MESFET has been used. The oscillator is stabilized by a coplanar waveguide transmission line resonator patterned from a YBa/sub 2/Cu/sub 3/O/sub 7-x/ film onto the LaAlO/sub 3/ substrate. The oscillator, operating at 77 K, is characterized by a center frequency of 6.5 GHz and a power output of nearly 5 dBm. A single-sideband phase noise to carrier ratio of -90 dBc/Hz at 10-kHz offset has been attained. The attenuation of harmonics is better than 10 dBc.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"11 1","pages":"923-926"},"PeriodicalIF":0.0000,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"High-temperature superconducting resonator-stabilized coplanar hybrid-integrated oscillator at 6.5 GHz\",\"authors\":\"R. Klieber, R. Ramisch, Robert Weigel, M. Schwab, R. Dill, A. Valenzuela, Peter Russer\",\"doi\":\"10.1109/IEDM.1991.235275\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A small-size coplanar oscillator has been designed and entirely fabricated on a 10-mm*10-mm/sup 2/ LaAlO/sub 3/ substrate in superconducting microwave integrated circuit (SMIC) technology. As an active element, a GaAs MESFET has been used. The oscillator is stabilized by a coplanar waveguide transmission line resonator patterned from a YBa/sub 2/Cu/sub 3/O/sub 7-x/ film onto the LaAlO/sub 3/ substrate. The oscillator, operating at 77 K, is characterized by a center frequency of 6.5 GHz and a power output of nearly 5 dBm. A single-sideband phase noise to carrier ratio of -90 dBc/Hz at 10-kHz offset has been attained. The attenuation of harmonics is better than 10 dBc.<<ETX>>\",\"PeriodicalId\":13885,\"journal\":{\"name\":\"International Electron Devices Meeting 1991 [Technical Digest]\",\"volume\":\"11 1\",\"pages\":\"923-926\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-12-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Electron Devices Meeting 1991 [Technical Digest]\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1991.235275\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Electron Devices Meeting 1991 [Technical Digest]","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1991.235275","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High-temperature superconducting resonator-stabilized coplanar hybrid-integrated oscillator at 6.5 GHz
A small-size coplanar oscillator has been designed and entirely fabricated on a 10-mm*10-mm/sup 2/ LaAlO/sub 3/ substrate in superconducting microwave integrated circuit (SMIC) technology. As an active element, a GaAs MESFET has been used. The oscillator is stabilized by a coplanar waveguide transmission line resonator patterned from a YBa/sub 2/Cu/sub 3/O/sub 7-x/ film onto the LaAlO/sub 3/ substrate. The oscillator, operating at 77 K, is characterized by a center frequency of 6.5 GHz and a power output of nearly 5 dBm. A single-sideband phase noise to carrier ratio of -90 dBc/Hz at 10-kHz offset has been attained. The attenuation of harmonics is better than 10 dBc.<>