{"title":"基传递时间对工艺参数的依赖性:GaAsBi基HBT的分析模拟","authors":"Farhana Afrin, Twisha Titirsha","doi":"10.1109/CEEE.2015.7428231","DOIUrl":null,"url":null,"abstract":"This paper presents a scheme of threshold-voltage-based 2-D theoretical model of GaAsBi based HBT in accordance with its dependency of transit time on various process parameters. Using MATLAB simulation generalized base transit time equation is implemented by varying a set of parameters for the prediction of its application in semiconductor filed. A suitable doping concentration of Bismuth is chosen for the proposed model to forecast an ideal and optimized HBT model with the defined substrate materials.","PeriodicalId":6490,"journal":{"name":"2015 International Conference on Electrical & Electronic Engineering (ICEEE)","volume":"302 1","pages":"109-112"},"PeriodicalIF":0.0000,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Dependency of base transit time on process parameters: An analytical simulation of GaAsBi based HBT\",\"authors\":\"Farhana Afrin, Twisha Titirsha\",\"doi\":\"10.1109/CEEE.2015.7428231\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a scheme of threshold-voltage-based 2-D theoretical model of GaAsBi based HBT in accordance with its dependency of transit time on various process parameters. Using MATLAB simulation generalized base transit time equation is implemented by varying a set of parameters for the prediction of its application in semiconductor filed. A suitable doping concentration of Bismuth is chosen for the proposed model to forecast an ideal and optimized HBT model with the defined substrate materials.\",\"PeriodicalId\":6490,\"journal\":{\"name\":\"2015 International Conference on Electrical & Electronic Engineering (ICEEE)\",\"volume\":\"302 1\",\"pages\":\"109-112\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 International Conference on Electrical & Electronic Engineering (ICEEE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CEEE.2015.7428231\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 International Conference on Electrical & Electronic Engineering (ICEEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CEEE.2015.7428231","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Dependency of base transit time on process parameters: An analytical simulation of GaAsBi based HBT
This paper presents a scheme of threshold-voltage-based 2-D theoretical model of GaAsBi based HBT in accordance with its dependency of transit time on various process parameters. Using MATLAB simulation generalized base transit time equation is implemented by varying a set of parameters for the prediction of its application in semiconductor filed. A suitable doping concentration of Bismuth is chosen for the proposed model to forecast an ideal and optimized HBT model with the defined substrate materials.
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