厚SOI MEMS /sub /动力学响应模型及其在过阻尼惯性传感器上的应用多晶硅封装和锚定新技术

B. Diem, J. Barbe, F. de Crécy, S. Giroud, D. Renaud, H. Grange, J. Hammond, J. Vandemeer, R. Roop, B. Gogoi
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引用次数: 3

摘要

开发了一种将高纵横比SOI表面微加工与多晶硅封装相结合的新技术,以及具有强大释放蚀刻制造裕度的新型氮化物锚定工艺。基于精确的阻尼模型,定义了SOI层的厚度,以在低g加速度计上实现过阻尼力学响应和高性能。在汽车应用中,需要过阻尼来过滤来自寄生振动的噪声。该技术是为低成本、高性能的惯性传感器而设计的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Polysilicon packaging and a new anchoring technology for thick SOI MEMS /sub y/namic response model and application to over-damped inertial sensors
A new technology has been developed that combines high aspect ratio SOI surface micromachining with polysilicon packaging and a new nitride anchor process with robust release etch manufacturing margin. Based on an accurate damping model, the thickness of the SOI layer was defined to achieve an overdamped mechanical response and high performance on a low g accelerometer. Over-damping is required to filter the noise from parasitic vibration in automotive applications. This technology was designed for low cost and high performance inertial sensors.
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