层间介质用低介电常数新型周期性介孔有机硅薄膜

Jiawei Zhang, Guoping Zhang, R. Sun, S. Lee, C. Wong
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引用次数: 0

摘要

开发了一种低介电常数的有机硅层间介质,引入了具有低极性和独特刚性结构的金刚烷。合成了新型有机硅烷前驱体金刚烷桥接有机硅烷前驱体,并对其进行了表征。将前驱体与破孔剂P123、酸和乙醇混合制备包衣液,采用蒸发诱导自组装法制备了新型的周期介孔有机硅(PMO)薄膜。通过优化孔隙素含量,制备的PMO薄膜具有超低介电常数(1.56@1 MHz)和高杨氏模量(6.69±0.54 GPa),并具有良好的有序结构和疏水性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Low-dielectric-constant novel periodic mesoporous organosilica thin film for interlayer dielectric
A low-dielectric-constant organosilica was developed for interlayer dielectric, introducing adamantane which possesses low polarity and unique rigid structure. Novel organosilane precursor, adamantane-bridged organosilane precursor, was synthesized and characterized. Precursor was mixed with porogen P123, acid and ethanol to prepare coating solution, and the novel periodic mesoporous organosilica (PMO) thin film was prepared via evaporation-induced self-assembly method. The PMO thin film presents ultra-low dielectric constants (1.56@1 MHz) and high Young's modulus (6.69±0.54 GPa) via optimizing the porogen content, besides it shows order structure and hydrophobic property.
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