一种用于向HeLa细胞输送分子的高鲁棒硅纳米柱电穿孔芯片

Xu Zhao, Haixiang Liu, Xiaoyi Wang, Cong Zhao, Izhar, Benzhong Tang, Yi-Kuen Lee
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摘要

电穿孔技术是利用脉冲电场增加细胞膜的通透性,从而实现药物传递和DNA转染的一种重要的生物技术,具有较高的细胞活力和效率。到目前为止,研究人员提出了微纳米技术用于电穿孔(EP)。制备了用于小分子低电压递送的铝纳米尖峰电位(ANS-EP)芯片。然而,芯片上的纳米尖峰具有高度可变形性和高度化学反应性。为了提高电穿孔芯片的机械强度,我们提出了一种新型的镀金硅纳米柱电穿孔芯片。COMSOL电场数值模拟结果表明,由于低宏观场发射(LMFE),电场增强,特别是在Au-SiNP EP芯片尖端附近。采用投影光刻、蚀刻和溅射工艺制备了Au-SiNP-EP芯片。在数字荧光显微镜下,以吖啶橙(AO)和碘化丙啶(PI)为染料,采用HeLa细胞制备Au-SiNP-EP芯片的优化方案只需要施加3V的电压。综上所述,与ANS-EP芯片相比,具有高机械强度的低压Au-SiNP-EP芯片有望用于大规模高通量EP,用于细胞分子递送。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Highly Robust Silicon Nano-pillar Chip for Electroporation Chip for Delivering Molecules to HeLa Cells
Electroporation (EP) is one of key bio-techniques for delivery of molecules to different types of cells, which uses the pulsed electric field to increase the permeability of cell membranes for drug delivery and DNA transfection because of its high cell viability and efficiency. Up to now, the researcher proposed micro/nanotechnology for electroporation (EP). The aluminum nano-spike EP (ANS-EP) chip has been fabricated for the small molecule delivery under a low applied voltage. However, the nano-spike on the chip is highly deformable and highly chemically reactive. We propose a novel gold-coated silicon nano-pillar electroporation (Au-SiNP-EP) chip to improve the mechanical strength of EP chips. COMSOL, electric field numerical simulations, indicated that the electric field enhancement, especially near the tips of Au-SiNP EP chip because of low-macroscopic-field emission (LMFE). Au-SiNP-EP chips were fabricated by projection photolithography, etching, and sputtering processes. The optimized protocol of Au-SiNP-EP chip using HeLa cells only requires the applied voltage of 3V using digital fluorescence microscopy with Acridine Orange (AO) and Propidium Iodide (PI) dyes. In summary, comparing to ANS-EP chips, the low-voltage Au-SiNP-EP chip with high mechanical strength is promising for large-scale high-throughput EP for molecular delivery to cells.
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