用于射频功率应用的宽带隙半导体器件和mmic

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) Pub Date : 2001-12-02 DOI:10.1109/IEDM.2001.979517

J. Palmour, S. Sheppard, R.P. Smith, S. Allen, W. Pribble, T.J. Smith, Z. Ring, J. Sumakeris, A. Saxler, J. Milligan

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引用次数: 72

摘要

在3.5 GHz频段，SiC mesfet的高功率密度达到5.2 W/mm，功率附加效率(PAE)达到63%。宽带mmic也用SiC mesfet进行了演示，在3.5 GHz下产生37w。使用GaN hemt可以获得更高的功率密度，在脉冲条件下可以达到12 W/mm。在SiC衬底上使用GaN hemt的混合放大器已证明脉冲输出功率为50.1 W，增益为8 dB, 10 GHz时PAE为28%，连续波功率为36 W。宽带宽GaN MMIC放大器的峰值脉冲功率为24.2瓦，16 GHz时增益为12.8 dB, PAE为22%。

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Wide bandgap semiconductor devices and MMICs for RF power applications

High power densities of 5.2 W/mm and 63% power added efficiency (PAE) have been demonstrated for SiC MESFETs at 3.5 GHz. Wide bandwidth MMICs have also been demonstrated with SiC MESFETs, yielding 37 W at 3.5 GHz. Even higher power densities have been obtained with GaN HEMTs, showing up to 12 W/mm under pulsed conditions. Hybrid amplifiers using GaN HEMTs on SiC substrates have demonstrated a pulsed output power level of 50.1 W, with 8 dB gain and PAE of 28% at 10 GHz, and CW power levels of 36 W have also been obtained. A wide bandwidth GaN MMIC amplifier had a peak pulsed power level of 24.2 watts, with a gain of 12.8 dB and PAE of 22% at 16 GHz.

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International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)

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