嵌入介电纳米颗粒对太阳能电池效率提高的光电综合分析

M. S. Murthy, M. Bajaj, N. Sathaye, Kota V. R. M. Murali, S. Ganguly
{"title":"嵌入介电纳米颗粒对太阳能电池效率提高的光电综合分析","authors":"M. S. Murthy, M. Bajaj, N. Sathaye, Kota V. R. M. Murali, S. Ganguly","doi":"10.1109/PVSC.2013.6744514","DOIUrl":null,"url":null,"abstract":"We study, by coupled electromagnetic and semiconductor device simulation, the effect of dielectric nanoparticles embedded in the depletion region of thin film solar cells. Absorbed photon densities, calculated using an electromagnetic solver, are mapped to the nodes of an electrical mesh on which three dimensional semiconductor device equations are solved. For the first time, we include here the effects of surface recombination and interface states at the Si/dielectric interface. We predict maximum increases of 9.3% and 9.9% in short circuit current density and efficiency respectively due to enhanced scattering from the dielectric nanoparticles.","PeriodicalId":6350,"journal":{"name":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Combined optical and electrical analysis of efficiency enhancement in solar cells with embedded dielectric nanoparticles\",\"authors\":\"M. S. Murthy, M. Bajaj, N. Sathaye, Kota V. R. M. Murali, S. Ganguly\",\"doi\":\"10.1109/PVSC.2013.6744514\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We study, by coupled electromagnetic and semiconductor device simulation, the effect of dielectric nanoparticles embedded in the depletion region of thin film solar cells. Absorbed photon densities, calculated using an electromagnetic solver, are mapped to the nodes of an electrical mesh on which three dimensional semiconductor device equations are solved. For the first time, we include here the effects of surface recombination and interface states at the Si/dielectric interface. We predict maximum increases of 9.3% and 9.9% in short circuit current density and efficiency respectively due to enhanced scattering from the dielectric nanoparticles.\",\"PeriodicalId\":6350,\"journal\":{\"name\":\"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-06-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.2013.6744514\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.2013.6744514","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

通过耦合电磁和半导体器件模拟,研究了介电纳米粒子嵌入薄膜太阳能电池耗尽区的影响。利用电磁求解器计算的吸收光子密度被映射到电网格的节点上,在电网格上求解三维半导体器件方程。本文首次讨论了硅/介电界面表面复合和界面态的影响。我们预测,由于介质纳米粒子的散射增强,短路电流密度和效率分别最大增加9.3%和9.9%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Combined optical and electrical analysis of efficiency enhancement in solar cells with embedded dielectric nanoparticles
We study, by coupled electromagnetic and semiconductor device simulation, the effect of dielectric nanoparticles embedded in the depletion region of thin film solar cells. Absorbed photon densities, calculated using an electromagnetic solver, are mapped to the nodes of an electrical mesh on which three dimensional semiconductor device equations are solved. For the first time, we include here the effects of surface recombination and interface states at the Si/dielectric interface. We predict maximum increases of 9.3% and 9.9% in short circuit current density and efficiency respectively due to enhanced scattering from the dielectric nanoparticles.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信