新型伪晶InP/InAs/sub 0.6/P/sub 0.4/量子阱HEMT

International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI:10.1109/IEDM.1991.235457

W. Hong, J. Hayes, R. Bhat, P. Lin, C. Nguyen, H.P. Lee, D. Yang, P. Bhattacharya

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引用次数: 0

摘要

本文首次研究了2DEG在InP/InAs/sub x/P/sub 1-x/调制掺杂伪晶异质结构中的输运性质，以及具有InP/InAs/sub 0.6/P/sub 0.4/量子阱通道的hemt(高电子迁移率晶体管)的器件特性。研究了低场和高场输运性质与砷组成(x)的关系。在300 K和77 K下，x=0.6时的霍尔迁移率分别为6100和52700 cm/sup /V-s。栅极长度为0.5 μ m的fet的最大外部跨导为320 mS/mm，漏极饱和电流密度为705 mA/mm。测得f/sub T/和f/sub max/分别为55 GHz和60 GHz。饱和电子速度估计为2.1*10/sup 7/ cm/s。结果清楚地表明，这些材料体系在高速应用方面具有巨大的潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Novel pseudomorphic InP/InAs/sub 0.6/P/sub 0.4/ quantum-well HEMT's

The authors report the first investigation of the transport properties of a 2DEG in pseudomorphic InP/InAs/sub x/P/sub 1-x/ modulation-doped heterostructures and the device characteristics of HEMTs (high electron mobility transistors) with an InP/InAs/sub 0.6/P/sub 0.4/ quantum-well channel. The dependence of the low- and high-field transport properties on the arsenic composition (x) has been studied. The Hall mobility for x=0.6 was measured to be 6100 and 52700 cm/sup 2//V-s at 300 and 77 K, respectively. The FETs having a gate length of 0.5 mu m exhibited a maximum external transconductance of 320 mS/mm and a drain saturation current density of 705 mA/mm. The f/sub T/ and f/sub max/ were measured to be 55 and 60 GHz, respectively. The saturation electron velocity was estimated to be 2.1*10/sup 7/ cm/s. The results clearly demonstrate the great potential of these material systems for high-speed applications.<>

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International Electron Devices Meeting 1991 [Technical Digest]

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