工作在毫米波短段的脉冲双漂移Si IMPATT二极管微波发电研究

2016 9th International Kharkiv Symposium on Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves (MSMW) Pub Date : 2016-06-20 DOI:10.1109/MSMW.2016.7538103

A. Bychok, A. Zorenko

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引用次数: 0

摘要

本文在此基础上介绍了硅漂移冲击电离雪崩传递时间(IMPATT)二极管和发生器实验样品的研究结果。在石英圆柱硅双漂移区IMPATT二极管上获得了频率为227 GHz、发射功率为16.6 mW、脉冲持续时间为80 ns的微波发生器。文中还给出了IMPATT振荡器的参数、用于IMPATT二极管与微波电池阻抗一致性的结构决策和测量通道图。

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Investigation of microwave power generation of pulse double-drift Si IMPATT diodes operating in short part of millimeter wave lengths

This article presents the results of studies experimental samples of silicon drift impact ionization avalanche transit-time (IMPATT) diodes and generators on its basis. On silicic double-drift region IMPATT diode with round quartz pillar it was obtained microwave generation with frequency of 227 GHz and launch power 16,6 mW with the pulse duration of 80 ns. Also, there are parameters of IMPATT oscillator, structural decisions used for the concordance of impedance of IMPATT diode with microwave cell and charts of measuring tract.

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来源期刊

2016 9th International Kharkiv Symposium on Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves (MSMW)

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