提出了一种新的无氟碳化学溶液，以限制蚀刻过程中多孔SiOCH膜的改性

2013 IEEE International Interconnect Technology Conference - IITC Pub Date : 2013-06-13 DOI:10.1109/IITC.2013.6615591

N. Possémé, L. Vallier, C. Kao, C. Licitra, C. Petit-Etienne, C. Mannequin, P. Gonon, S. Belostotskiy, J. Pender, S. Banola, O. Joubert, S. Nemani

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引用次数: 4

摘要

如今，多孔SiOCH结合金属硬掩蔽策略是先进BEOL互连技术节点的集成选择。然而，在这种情况下，主要的集成问题是介质膜对氟碳(FC)蚀刻化学的敏感性。在本研究中，提出了一种新的无FC蚀刻化学方法作为突破口。基于图案和毯膜分析，提出并讨论了这种新化学方法相对于传统FC蚀刻的优点。并对其与金属硬掩模集成和湿式清洗的相容性进行了评价。

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New fluorocarbon free chemistry proposed as solution to limit porous SiOCH film modification during etching

Today porous SiOCH combined with metallic hard masking strategy is an integration of choice for advanced BEOL interconnect technology node. However in this context the main integration issue is the dielectric film sensitivity to fluorocarbon (FC) etch chemistry. In this study, new FC free etching chemistry has been proposed as breakthrough solution. Based on pattern and blanket film analyses, the benefits of this new chemistry is presented and discussed with respect to conventional FC etching. Its compatibility with metallic hard mask integration and wet cleaning is also evaluated.

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2013 IEEE International Interconnect Technology Conference - IITC

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