真空热蒸发氧化法制备ZnO薄膜

The Annals of “Dunarea de Jos” University of Galati. Fascicle IX, Metallurgy and Materials Science Pub Date : 2022-06-15 DOI:10.35219/mms.2022.2.06

S. Boiciuc

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引用次数: 0

摘要

本文介绍了在常规炉中，在350 ~ 550℃的不同温度下，用热蒸发氧化法制备ZnO薄膜的方法。考察了电流强度、沉积时间和氧化温度对薄膜结构和透明度的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Obtaining Thin Films of ZnO Through Thermal Evaporation in Vacuum and Oxidation

The paper presents the obtaining of thin films out of ZnO by thermal evaporation and oxidation, in a conventional furnace, at various temperatures between 350-550 oC of films from pure Zn deposited. The influence of current intensity, deposition time and oxidation temperature on film structure and transparency was monitored.

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来源期刊

The Annals of “Dunarea de Jos” University of Galati. Fascicle IX, Metallurgy and Materials Science

自引率

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审稿时长

8 weeks