自组装InAs/GaAs量子点异质结构的亚能级间弛豫特性

2007 7th IEEE Conference on Nanotechnology (IEEE NANO) Pub Date : 2007-08-01 DOI:10.1109/NANO.2007.4601337

Jiunn-Chyi Lee, Yeu-Jent Hu, Ya-Fen Wu, T. Nee, Jen-Cheng Wang, Jia-Hui Fang

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引用次数: 1

摘要

研究了载流子动力学对具有不同点尺寸均匀性的InAs/GaAs量子点异质结构光致发光光谱温度依赖性的影响。利用基于量子点系统中每个离散能级的载流子弛豫和热发射的模型，模拟了子能级间的弛豫寿命和载流子传递机制。计算出的松弛寿命随温度的升高而减小，尺寸均匀性较低的样品的松弛寿命值较大。在载流子动力学的定量讨论中，通过我们的模型证明了热重分布对量子点系统载流子弛豫过程的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Intersublevel relaxation properties of self-assembled InAs/GaAs quantum dot heterostructures

We investigate the effect of carrier dynamics on the temperature dependence of photoluminescence spectra from InAs/GaAs quantum dot heterostructures with different dot size uniformity. Intersublevel relaxation lifetimes and carrier transferring mechanisms are simulated using a model based on carrier relaxing and thermal emitting of each discrete energy level in the quantum dot system. Calculated relaxation lifetimes are decreasing with temperature and have larger values for samples with lower size uniformity. In the quantitative discussion of carrier dynamics, the influence of thermal redistribution on carrier relaxing process of quantum dot system is demonstrated by our model.

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来源期刊

2007 7th IEEE Conference on Nanotechnology (IEEE NANO)

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