N. Chujo, K. Sakui, H. Ryoson, S. Sugatani, Tomoji Nakamura, T. Ohba
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Bumpless Build Cube (BBCube): High-Parallelism, High-Heat-Dissipation and Low-Power Stacked Memory Using Wafer-Level 3D Integration Process
The superior electrical performance of 3D integration (3DI) with bumpless wafer-on-wafer (WOW) was clarified by 3D electromagnetic (EM) field analysis. We propose a high parallelism stacked memory, named “BBCube”, using WOW. In comparison with conventional high-bandwidth memory (HBM), BBCube can achieve a bandwidth four-times higher, at 1.4 TB/s, with only 13 % of the I/O power consumption, at 0.29 W. Furthermore, it should have sufficient potential to realize 32-times higher bandwidth and four-times more stacking levels.
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