Thermal characterization of SiC MOSFETs for automotive power module

This paper shows that thermal characterization of SiC MOSFETs for automotive power module using the thermal transient measurement method, simulation, calibration, and boundary condition independent reduced order model. Thermal transient measurement method was used to determine the thermal resistance of the junction to case. As a second task, the thermal model calibration using the thermal transient measurement was built for even more accurate thermal simulations and improve the reliability of components. We also demonstrated the boundary condition independent reduce order model (BCI-ROM) for automotive mission power profile from a full detailed calibrated model. Model order reduction aims to lower the computational complexity thus allowing for faster solving while maintain predictive accuracy in space and time.