纳米图形应用的并行水平集速度扩展算法

Michael Quell, A. Toifl, A. Hössinger, S. Selberherr, J. Weinbub
{"title":"纳米图形应用的并行水平集速度扩展算法","authors":"Michael Quell, A. Toifl, A. Hössinger, S. Selberherr, J. Weinbub","doi":"10.1109/SISPAD.2019.8870482","DOIUrl":null,"url":null,"abstract":"We present a parallelized algorithm for accelerating the velocity extension calculations in a level-set method, which is essential for surface velocity based topography simulations, such as etching or deposition simulations for nanopatterning applications. The proposed algorithm improves the prevailing fast marching method by optimizing the heap data structure and efficiently reordering the calculations. We implemented the algorithm into Silvaco’s Victory Process simulator, which is utilized for evaluating our algorithm with a three-dimensional simulation of an ion beam etching process used for spin-transfer torque magnetoresistive random access memory devices. Our results show a significant serial speed-up by a factor of at least 1.4 and a total speed-up by a factor of up to 8 using 8 threads for the velocity extension.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"68 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Parallelized Level-Set Velocity Extension Algorithm for Nanopatterning Applications\",\"authors\":\"Michael Quell, A. Toifl, A. Hössinger, S. Selberherr, J. Weinbub\",\"doi\":\"10.1109/SISPAD.2019.8870482\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present a parallelized algorithm for accelerating the velocity extension calculations in a level-set method, which is essential for surface velocity based topography simulations, such as etching or deposition simulations for nanopatterning applications. The proposed algorithm improves the prevailing fast marching method by optimizing the heap data structure and efficiently reordering the calculations. We implemented the algorithm into Silvaco’s Victory Process simulator, which is utilized for evaluating our algorithm with a three-dimensional simulation of an ion beam etching process used for spin-transfer torque magnetoresistive random access memory devices. Our results show a significant serial speed-up by a factor of at least 1.4 and a total speed-up by a factor of up to 8 using 8 threads for the velocity extension.\",\"PeriodicalId\":6755,\"journal\":{\"name\":\"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"volume\":\"68 1\",\"pages\":\"1-4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SISPAD.2019.8870482\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2019.8870482","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

我们提出了一种并行算法,用于在水平集方法中加速速度扩展计算,这对于基于表面速度的地形模拟至关重要,例如用于纳米图案应用的蚀刻或沉积模拟。该算法通过优化堆数据结构和有效地重新排序计算,改进了目前流行的快速行军方法。我们在Silvaco的Victory Process模拟器中实现了该算法,并利用该模拟器对用于自旋转移转矩磁阻随机存取存储器的离子束刻蚀过程进行了三维模拟,以评估我们的算法。我们的结果显示,使用8个线程进行速度扩展时,串行加速至少提高了1.4倍,总速度提高了8倍。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Parallelized Level-Set Velocity Extension Algorithm for Nanopatterning Applications
We present a parallelized algorithm for accelerating the velocity extension calculations in a level-set method, which is essential for surface velocity based topography simulations, such as etching or deposition simulations for nanopatterning applications. The proposed algorithm improves the prevailing fast marching method by optimizing the heap data structure and efficiently reordering the calculations. We implemented the algorithm into Silvaco’s Victory Process simulator, which is utilized for evaluating our algorithm with a three-dimensional simulation of an ion beam etching process used for spin-transfer torque magnetoresistive random access memory devices. Our results show a significant serial speed-up by a factor of at least 1.4 and a total speed-up by a factor of up to 8 using 8 threads for the velocity extension.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信