在光滑石英衬底上用一步脉冲激光沉积法生长的热致变色VO2(M)纳米薄膜的结构、光学和电学特性

IF 1.5 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER
A. Hendaoui
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引用次数: 4

摘要

采用低沉积速率脉冲激光沉积技术,在光滑石英衬底上直接生长出不同形貌的M相氧化钒(VO2)薄膜。当衬底温度在450°C - 750°C范围内升高时,VO2(M)薄膜的(011)织构化效果较好,结晶度也有所提高。在450°C时,VO2(M)晶粒细小且密集排列,而在750°C时,微/纳米线排列较少。讨论了结晶度/形貌演变的机理,并将其与温度对吸附原子扩散的影响以及对VO2(M)薄膜中V5+价态含量的影响联系起来。电阻率测量作为温度的函数显示,VO2(M)薄膜的绝缘体到金属的转变特征(即转变温度(TIMT),电阻率变化(ΔR),滞后宽度(ΔH)和转变锐利度(ΔT))强烈依赖于加工温度。在光学性能方面,发现在高温下获得的薄膜的开放(即多孔)结构导致其透光率的提高。同时,薄膜的结晶度随温度的升高而提高,从而提高了薄膜的红外调制能力。目前的贡献提供了一个一步的过程来控制生长在光滑石英衬底上的VO2(M)薄膜的形态,用于开关,存储器件和智能窗口。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Substrate Temperature-Dependent Structural, Optical, and Electrical Properties of Thermochromic VO2(M) Nanostructured Films Grown by a One-Step Pulsed Laser Deposition Process on Smooth Quartz Substrates
Thermochromic M-phase vanadium dioxide VO2(M) films with different morphologies have been grown directly on smooth fused quartz substrates using low deposition rate pulsed laser deposition without posttreatment. When the substrate temperature was increased in the range 450°C–750°C, better (011) texturization of VO2(M) films was observed along with an enhancement of their crystallinity. Morphology evolved from small-grained and densely packed VO2(M) grains at 450°C to less packed micro/nanowires at 750°C. Mechanisms behind the crystallinity/morphology evolution were discussed and correlated with the effect of the temperature on the diffusion of the adatoms as well as on the V5+ valence states content in VO2(M) films. Resistivity measurements as a function of temperature revealed that the insulator-to-metal transition features of VO2(M) films (i.e., transition temperature (TIMT), resistivity variation (ΔR), hysteresis width (ΔH), and transition sharpness (ΔT)) are strongly dependent on the processing temperature. In terms of optical properties, it was found that the open (i.e., porous) structure of the films achieved at high temperature induced an improvement of their luminous transmittance. Simultaneously, the enhancement of the films crystallinity with the temperature resulted in better IR modulation ability. The present contribution provides a one-step process to control the morphology of VO2(M) films grown on smooth quartz substrates for applications as switches, memory devices, and smart windows.
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来源期刊
Advances in Condensed Matter Physics
Advances in Condensed Matter Physics PHYSICS, CONDENSED MATTER-
CiteScore
2.30
自引率
0.00%
发文量
33
审稿时长
6-12 weeks
期刊介绍: Advances in Condensed Matter Physics publishes articles on the experimental and theoretical study of the physics of materials in solid, liquid, amorphous, and exotic states. Papers consider the quantum, classical, and statistical mechanics of materials; their structure, dynamics, and phase transitions; and their magnetic, electronic, thermal, and optical properties. Submission of original research, and focused review articles, is welcomed from researchers from across the entire condensed matter physics community.
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