一种380 V高效率、高功率密度宽禁带半导体开关电容功率变换器

L. Fan, A. Knott, I. Jørgensen
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引用次数: 4

摘要

最先进的开关电容DC-DC电源变换器主要集中在低电压和/或高功率应用。然而,在高电压和低功率水平下,预计会出现新的设计,并且高度需要具有高效率和高功率密度的功率转换器。本文介绍了一种高电压低功率开关电容DC-DC变换器,其输入电压可达380 V(兼容整流欧洲市电),实验验证输出功率可达21.3 W。将GaN开关和SiC二极管的宽带隙半导体器件组合在一起构成所提出的功率级。利用瞬态波形和热图像分析了它们的开关和损耗特性。比较了不同的隔离驱动电路,提出了一种紧凑的隔离半桥驱动电路。功率级和整个功率转换器的全负荷效率分别为98.3%和97.6%,没有散热器或气流。相应的功率密度分别为7.9 W/cm和2.7 W/cm(基于箱体体积)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 380 V High Efficiency and High Power Density Switched-Capacitor Power Converter using Wide Band Gap Semiconductors
State-of-the-art switched-capacitor DC-DC power converters mainly focus on low voltage and/or high power applications. However, at high voltage and low power levels, new designs are anticipated to emerge and a power converter that has both high efficiency and high power density is highly desirable. This paper presents such a high voltage low power switched-capacitor DC-DC converter with an input voltage up to 380 V (compatible with rectified European mains) and an output power experimentally validated up to 21.3 W. The wide band gap semiconductor devices of GaN switches and SiC diodes are combined to compose the proposed power stage. Their switching and loss characteristics are analyzed with transient waveforms and thermal images. Different isolated driving circuits are compared and a compact isolated halfbridge driving circuit is proposed. The full-load efficiencies of 98.3% and 97.6% are achieved for the power stage and the complete power converter, without heatsink or airflow. The corresponding power densities are 7.9 W/cm and 2.7 W/cm, based on boxed volumes, respectively.
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