基于银纳米结构的低温Cu-Cu键合三维集成

Ziyu Liu, Jian Cai, Qian Wang, Lin Tan, Yang Hu
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引用次数: 9

摘要

利用银纳米结构实现了一种可靠的低温短时间Cu-Cu键合三维集成的新方法。采用脉冲激光沉积技术在铜衬垫上制备了由多个纳米颗粒组成的银纳米结构。结合过程在250℃下进行5 min,然后在250℃下进行25 min的退火过程,平均抗剪强度达到14.4 MPa,结合Ag界面、Ag/Cu界面和TiW/Al界面出现裂纹。通过界面截面检测,在界面处可以观察到连续无空隙的银膜,这对降低电阻有显著的好处。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Low Temperature Cu-Cu Bonding Using Ag Nanostructure for 3D Integration
A novel reliable low temperature short time Cu-Cu bonding method using Ag nanostructure for 3D integration was realized in the work. Ag nanostructure consisted of many nanoparticles (NP) were deposited by pulsed laser deposition on patterned Cu pads. Bonding process was completed at 250°C for 5 min followed by an annealing process at 250°C for 25 min. Average shear strength of 14.4 MPa was reached and cracks occurred at bonded Ag interfaces, Ag/Cu interfaces and TiW/Al interfaces. According to cross-sectional interface inspection, continuous void-free bonded-Ag film was observed at the bonding interface, which was significantly beneficial to lowering electrical resistance.
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来源期刊
ECS Solid State Letters
ECS Solid State Letters MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED
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