反应离子束溅射制备Er掺杂ZnO的生长与表征

2010 3rd International Nanoelectronics Conference (INEC) Pub Date : 2010-03-04 DOI:10.1109/INEC.2010.5425089

Chung-Chi Liau, L. Chao

{"title":"反应离子束溅射制备Er掺杂ZnO的生长与表征","authors":"Chung-Chi Liau, L. Chao","doi":"10.1109/INEC.2010.5425089","DOIUrl":null,"url":null,"abstract":"Er doped ZnO (EZO) has been deposited on Si substrate at 500°C by reactive ion beam sputtering utilizing a capillaritron ion source at various oxygen partial flow rates. All the EZO films exhibit a preferred (002) growth direction. Maximum Er emission at 984 nm (4I11/2 to 4I15/2) was achieved from EZO deposited with 12.5% oxygen partial flow rate. XPS analysis of the O 1s core level shows an additional peak centered at 532.5 eV, indicating the presence of erbium oxide.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":"104 1","pages":"976-977"},"PeriodicalIF":0.0000,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Growth and characterization of Er doped ZnO prepared by reactive ion beam sputtering\",\"authors\":\"Chung-Chi Liau, L. Chao\",\"doi\":\"10.1109/INEC.2010.5425089\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Er doped ZnO (EZO) has been deposited on Si substrate at 500°C by reactive ion beam sputtering utilizing a capillaritron ion source at various oxygen partial flow rates. All the EZO films exhibit a preferred (002) growth direction. Maximum Er emission at 984 nm (4I11/2 to 4I15/2) was achieved from EZO deposited with 12.5% oxygen partial flow rate. XPS analysis of the O 1s core level shows an additional peak centered at 532.5 eV, indicating the presence of erbium oxide.\",\"PeriodicalId\":6390,\"journal\":{\"name\":\"2010 3rd International Nanoelectronics Conference (INEC)\",\"volume\":\"104 1\",\"pages\":\"976-977\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-03-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 3rd International Nanoelectronics Conference (INEC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/INEC.2010.5425089\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 3rd International Nanoelectronics Conference (INEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INEC.2010.5425089","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

利用毛细管离子源，在不同的氧分流速率下，在500℃的温度下，通过反应离子束溅射在Si衬底上沉积了Er掺杂ZnO (EZO)。所有的EZO薄膜都表现出优先的(002)生长方向。当氧偏流量为12.5%时，沉积的EZO在984 nm (4I11/2 ~ 4I15/2)处的Er发射量最大。XPS分析表明，o1s核心能级在532.5 eV处有一个额外的峰，表明氧化铒的存在。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Growth and characterization of Er doped ZnO prepared by reactive ion beam sputtering

Er doped ZnO (EZO) has been deposited on Si substrate at 500°C by reactive ion beam sputtering utilizing a capillaritron ion source at various oxygen partial flow rates. All the EZO films exhibit a preferred (002) growth direction. Maximum Er emission at 984 nm (4I11/2 to 4I15/2) was achieved from EZO deposited with 12.5% oxygen partial flow rate. XPS analysis of the O 1s core level shows an additional peak centered at 532.5 eV, indicating the presence of erbium oxide.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2010 3rd International Nanoelectronics Conference (INEC)

自引率

0.00%

发文量