基于CVD锰基自形成势垒的先进互连技术

2013 IEEE International Interconnect Technology Conference - IITC Pub Date : 2013-06-13 DOI:10.1109/IITC.2013.6615551

Y. Siew, N. Jourdan, Y. Barbarin, J. Machillot, S. Demuynck, K. Croes, J. Tseng, H. Ai, J. Tang, M. Naik, P. Wang, M. Narasimhan, M. Abraham, A. Cockburn, J. Bommels, Z. Tokei

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引用次数: 7

摘要

对基于CVD mn的自形成势垒(SFB)进行了评估，并将其集成到可靠性和RC延迟评估中。从平面电容测量中提取了固有TDDB寿命。在SiO2和多孔低钾薄氧化衬里上获得了与TaN/Ta基准相当的寿命。集成后，系统具有良好的可靠性。与传统势垒相比，显著的RC减少(在40nm半间距时高达45%)和更低的通孔电阻在缩放时变得更有利，使CVD mn基SFB成为未来互连技术的有吸引力的候选技术。

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CVD Mn-based self-formed barrier for advanced interconnect technology

CVD Mn-based self-formed barrier (SFB) has been evaluated and integrated for reliability and RC delay assessment. Intrinsic TDDB lifetimes were extracted from planar capacitor measurement. A comparable lifetime as the TaN/Ta reference was obtained on SiO2 and porous low-k with a thin oxide liner. Good reliability performance was demonstrated after integration. Compared to conventional barrier, significant RC reduction (up to 45% at 40nm half pitch) and lower via resistance which become more beneficial upon scaling present CVD Mn-based SFB as an attractive candidate for future interconnect technology.

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2013 IEEE International Interconnect Technology Conference - IITC

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