{"title":"1.25伏，低成本，嵌入式闪存低密度应用","authors":"R. McPartland, R. Singh","doi":"10.1109/VLSIC.2000.852878","DOIUrl":null,"url":null,"abstract":"A low cost, embedded flash memory cell, with read control-gate voltage as low as 1.25 volts, has been developed. Single cell testers and 4 kbit arrays have been fabricated and characterized. Fabrication requires only a single masking step (thick gate oxide) above that used in high-performance core CMOS logic technologies. Applications include low-density non-volatile memory, control of redundancy in SRAM and DRAM memories, ID or security code registers, and other switch functions.","PeriodicalId":6361,"journal":{"name":"2000 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.00CH37103)","volume":"319 1","pages":"158-161"},"PeriodicalIF":0.0000,"publicationDate":"2000-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"28","resultStr":"{\"title\":\"1.25 volt, low cost, embedded flash memory for low density applications\",\"authors\":\"R. McPartland, R. Singh\",\"doi\":\"10.1109/VLSIC.2000.852878\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A low cost, embedded flash memory cell, with read control-gate voltage as low as 1.25 volts, has been developed. Single cell testers and 4 kbit arrays have been fabricated and characterized. Fabrication requires only a single masking step (thick gate oxide) above that used in high-performance core CMOS logic technologies. Applications include low-density non-volatile memory, control of redundancy in SRAM and DRAM memories, ID or security code registers, and other switch functions.\",\"PeriodicalId\":6361,\"journal\":{\"name\":\"2000 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.00CH37103)\",\"volume\":\"319 1\",\"pages\":\"158-161\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-06-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"28\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2000 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.00CH37103)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIC.2000.852878\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.00CH37103)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.2000.852878","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
1.25 volt, low cost, embedded flash memory for low density applications
A low cost, embedded flash memory cell, with read control-gate voltage as low as 1.25 volts, has been developed. Single cell testers and 4 kbit arrays have been fabricated and characterized. Fabrication requires only a single masking step (thick gate oxide) above that used in high-performance core CMOS logic technologies. Applications include low-density non-volatile memory, control of redundancy in SRAM and DRAM memories, ID or security code registers, and other switch functions.
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