高电容Cu/Ta2O5/Cu MIM结构，用于SoC应用，具有单掩模附加工艺

Technical digest. International Electron Devices Meeting Pub Date : 2002-12-08 DOI:10.1109/IEDM.2002.1175991

T. Ishikawa, D. Kodama, Y. Matsui, M. Hiratani, T. Furusawa, D. Hisamoto

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引用次数: 48

摘要

本文提出了一种用于SoC应用的金属-绝缘体-金属电容器，该电容器具有最高的电容密度(高达12 fF//spl mu/m/sup 2/)。简单的MIM结构允许将该工艺作为传统Cu BEOL处理的单掩膜附加件进行开发。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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High-capacitance Cu/Ta2O5/Cu MIM structure for SoC applications featuring a single-mask add-on process

This paper presents a metal-insulator-metal capacitor for SoC applications which has the highest capacitance density (up to 12 fF//spl mu/m/sup 2/) ever reported for a device in this field. The simple MIM structure allowed development of the process as a single-mask add-on to conventional Cu BEOL processing.

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来源期刊

Technical digest. International Electron Devices Meeting

CiteScore

4.50

自引率

0.00%

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