应用新颖的无损分析技术对包装相关失效进行分析

C. H. Chu, Y. T. Lin, W. Hsu, C. T. Chang, P. S. Kuo, Y. Hsieh
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引用次数: 2

摘要

最近,在2.5D和3D IC上投入了大量的研发工作,使封装更小,更薄,并增强了性能和功能。封装结构的复杂性使其失效分析成为一个难点。当封装解封后芯片功能恢复时。打开包装箱前,需要掌握一定的技术和工具,以确定故障地点。为了在包装层面详细调查根本原因,需要具有更高分辨率和穿透能力的新工具来非破坏性地解决故障。利用TDR、3D x射线显微镜和锁定热发射显微镜,可以清晰地揭示封装过程中产生的失效部位,并通过断面FIB、SEM、TEM等物理失效分析,找出根本原因。本文将讨论失效案例的实例。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Applying novel non-destructive failure analysis techniques on the package related failures
Recently, lots R&D efforts are put on the 2.5D and 3D IC to make package smaller, thinner and with enhanced performance and functions. The complexity of the packaging structure makes the failure analysis a difficulty. When chip function is recovered back after decapsulation of the package. Technique and tools are required to catch the failure site before opening the package. In order to detailed investigate the root cause at packaging level, new tools with higher resolution and penetration capability are required to non-destructively tackle the failure. By utilizing TDR, 3D X-ray microscope and lock-in thermal emission microscope, failure site resulted from package process can be clearly revealed and the root cause can be identified by following physical failure analysis such as cross sectional FIB, SEM and TEM. Examples of failure cases will be discussed in this paper.
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