用于扇出晶圆级和面板级封装的细线和低应力RDL解决方案

Yoshinori Matsuura, T. Yoshida, Yukiko Komiya, Toshimi Nakamura, Takenori Yanai, Kazuhiro Okuyama, Yukiko Kitabatake, Rintaro Ishii, Katsuyuki Hayashi, Takashi Kubota, Joji Fujii
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引用次数: 2

摘要

在当前和下一代先进封装的构建和集成过程中面临的工艺限制需要一种新的RDL(再分配层)方法来克服精细的L/S和应力约束。如果设计、工艺和材料之间的相互作用没有得到优化或控制,那么就会产生损失和更高的成本。RDL是包的一个组成部分,随着设计复杂性的增加,这样的层的数量也会增加。本文通过HRDP®(High Resolution Debondable Panel)技术引入了一个新的RDL概念。它受到了业界的广泛关注,特别是对于扇出,芯片最后,晶圆级和面板级封装组件。介绍了HRDP®的结构和材料。适用的HRDP®载体可以提供各种尺寸和厚度的圆形面板和带有玻璃或硅的方形/矩形面板,以满足客户的要求。这样可以简化工艺并改善界面应力。详细阐述了使用HRDP®的工艺步骤,这些步骤基本上使用了RDL金属图案中的现有工具(即光刻,Developer/Descum等),而不会破坏装配线布局和工艺流程。HRDP®与现有的电介质和光阻剂兼容。已经证明,基于在凹凸晶圆厂中用于RDL的介电材料和光抗蚀剂的能力,可以实现2/ 2um或更小的L/S几何形状。已共享可靠性数据。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Fine Line and Low Stress RDL Solition for Fan-Out Wafer Level & Panel Level Packaging
Process limitations faced during the construction and integration of current and next generation advanced packages require a new RDL (Redistribution Layer) approach to overcome fine L/S and stress constraints. If interactions between design, process and materials are not optimized or controlled, then yield loss and higher cost result. RDL is an integral part of a package and with greater design complexity the number of such layers also increase. This paper introduces a new RDL concept through HRDP® (High Resolution Debondable Panel) technology. It has received industry wide attention, especially for Fan-Out, Chip Last, Wafer Level & Panel Level package assemblies. The structure and materials for HRDP® are described. The applicable HRDP® carrier can be provided in various dimensions and thicknesses for round panels and for square/rectangular panels with glass or silicon to match customer requirements. This accommodates process simplification and improves interfacial stresses. The process steps using HRDP® are elaborated, which essentially use existing tools in RDL metal patterning (i.e., Lithography, Developer/Descum etc.) without disrupting the assembly line layout and process flow. HRDP® is compatible with existing dielectrics and photoresists. It has been demonstrated that based upon the capabilities of dielectrics and photoresists used for RDL in the bump fab, fine L/S geometries of 2/2 um and less have been achieved. Reliability data has been shared.
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