M. Takase, S. Isono, Y. Tomekawa, T. Koyanagi, T. Tokuhara, M. Harada, Y. Inoue
{"title":"超120db宽动态范围3.0 μm像素图像传感器，像素内电容为41.7 fF/um2，采用BEOL 3D电容工艺实现高可靠性","authors":"M. Takase, S. Isono, Y. Tomekawa, T. Koyanagi, T. Tokuhara, M. Harada, Y. Inoue","doi":"10.1109/VLSIT.2018.8510685","DOIUrl":null,"url":null,"abstract":"We realized a simultaneous-capture wide-dynamic-range image sensor with 3.0 μm pixels using novel in-pixel 3D capacitors located in BEOL. We achieved high capacitance density of 41.7 fF/μm<sup>2</sup> and low leakage current density of 3.6×10<sup>−10</sup> A/cm<sup>2</sup> at 1 V by applying 3D structure and optimizing dielectric deposition process. TDDB investigations showed that estimated failure time at 125°C is more than 10 years. We demonstrated over 120 dB dynamic range image sensor with 3.0 μm pixels, which is enabled by this BEOL 3D capacitor process technology. (Keywords: image sensor, capacitor, 3D, BEOL, high reliability and wide dynamic range)","PeriodicalId":6561,"journal":{"name":"2018 IEEE Symposium on VLSI Technology","volume":"10 1","pages":"71-72"},"PeriodicalIF":0.0000,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"An over 120 dB wide-dynamic-range 3.0 μm pixel image sensor with in-pixel capacitor of 41.7 fF/um2 and high reliability enabled by BEOL 3D capacitor process\",\"authors\":\"M. Takase, S. Isono, Y. Tomekawa, T. Koyanagi, T. Tokuhara, M. Harada, Y. Inoue\",\"doi\":\"10.1109/VLSIT.2018.8510685\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We realized a simultaneous-capture wide-dynamic-range image sensor with 3.0 μm pixels using novel in-pixel 3D capacitors located in BEOL. We achieved high capacitance density of 41.7 fF/μm<sup>2</sup> and low leakage current density of 3.6×10<sup>−10</sup> A/cm<sup>2</sup> at 1 V by applying 3D structure and optimizing dielectric deposition process. TDDB investigations showed that estimated failure time at 125°C is more than 10 years. We demonstrated over 120 dB dynamic range image sensor with 3.0 μm pixels, which is enabled by this BEOL 3D capacitor process technology. (Keywords: image sensor, capacitor, 3D, BEOL, high reliability and wide dynamic range)\",\"PeriodicalId\":6561,\"journal\":{\"name\":\"2018 IEEE Symposium on VLSI Technology\",\"volume\":\"10 1\",\"pages\":\"71-72\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE Symposium on VLSI Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.2018.8510685\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2018.8510685","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An over 120 dB wide-dynamic-range 3.0 μm pixel image sensor with in-pixel capacitor of 41.7 fF/um2 and high reliability enabled by BEOL 3D capacitor process
We realized a simultaneous-capture wide-dynamic-range image sensor with 3.0 μm pixels using novel in-pixel 3D capacitors located in BEOL. We achieved high capacitance density of 41.7 fF/μm2 and low leakage current density of 3.6×10−10 A/cm2 at 1 V by applying 3D structure and optimizing dielectric deposition process. TDDB investigations showed that estimated failure time at 125°C is more than 10 years. We demonstrated over 120 dB dynamic range image sensor with 3.0 μm pixels, which is enabled by this BEOL 3D capacitor process technology. (Keywords: image sensor, capacitor, 3D, BEOL, high reliability and wide dynamic range)
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