一个低于400/spl度/C的锗MOSFET技术，具有高/spl kappa/介电和金属栅极

Technical digest. International Electron Devices Meeting Pub Date : 2002-12-08 DOI:10.1109/IEDM.2002.1175872

C. O. Chui, Hyoungsub Kim, D. Chi, B. Triplett, P. McIntyre, K. Saraswat

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引用次数: 124

摘要

采用高/spl kappa/栅极介质和金属栅极电极，提出了一种新的低热收支(/spl les/400/spl℃)锗MOS工艺。首次证明了具有等效氧化厚度(EOT)为6-10 /spl的ZrO/sub /栅极介质和铂栅电极的自定向表面通道Ge p- mosfet具有两倍于Si mosfet的低场空穴迁移率。

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A sub-400/spl deg/C germanium MOSFET technology with high-/spl kappa/ dielectric and metal gate

A novel low thermal budget (/spl les/400/spl deg/C) germanium MOS process with high-/spl kappa/ gate dielectric and metal gate electrode has been demonstrated. For the first time, self-aligned surface-channel Ge p-MOSFETs with ZrO/sub 2/ gate dielectric having equivalent oxide thickness (EOT) of 6-10 /spl Aring/ and platinum gate electrode are demonstrated with twice the low-field hole mobility of Si MOSFETs.

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来源期刊

Technical digest. International Electron Devices Meeting

CiteScore

4.50

自引率

0.00%

发文量