应力松弛aln缓冲导向gan纳米方尖碑型高性能紫外光电探测器

Pargam Vashishtha, Pukhraj Prajapat, Lalit N. Goswami, Aditya V. Yadav, A. Pandey, G. Gupta
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引用次数: 16

摘要

开发了外延GaN纳米结构,并评估了AlN缓冲层(温度调制)对材料特性和光电子器件应用的影响。在不同温度(770-830℃)下,在Si(111)衬底上生长AlN缓冲层,然后使用等离子体辅助分子束外延生长GaN。研究表明,相对低温的AlN缓冲层负责应力松弛和晶格应变松弛,并实现GaN纳米方尖碑结构。相反,AlN生长温度的升高导致GaN纳米锥体结构和纳米蜡/衰减结构的形成。这些生长的GaN/AlN/Si异质结构被用于开发金属-半导体-金属几何格式的光电探测器。在紫外线照射下测试了这些制备的光电器件的性能,其中基于GaN纳米方尖碑的器件达到了最高的响应度,为118 AW−1。在UVA (325 nm)光照下,该器件的检出率为1 × 1010 Jones,噪声等效功率为1 × 10−12 WHz−1/2,外量子效率为45000%。分析表明,AlN缓冲层的质量显著提高了器件的光电性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Stress-Relaxed AlN-Buffer-Oriented GaN-Nano-Obelisks-Based High-Performance UV Photodetector
Epitaxial GaN nanostructures are developed, and the influence of the AlN buffer layer (temperature modulation) on material characteristics and optoelectronic device application is assessed. The AlN buffer layer was grown on a Si (111) substrate at varying temperatures (770–830 °C), followed by GaN growth using plasma-assisted molecular beam epitaxy. The investigation revealed that the comparatively lower temperature AlN buffer layer was responsible for stress and lattice strain relaxation and was realized as the GaN nano-obelisk structures. Contrarily, the increased temperature of the AlN growth led to the formation of GaN nanopyramidal and nanowax/wane structures. These grown GaN/AlN/Si heterostructures were utilized to develop photodetectors in a metal–semiconductor–metal geometry format. The performance of these fabricated optoelectronic devices was examined under ultraviolet illumination (UVA), where the GaN nano-obelisks-based device attained the highest responsivity of 118 AW−1. Under UVA (325 nm) illumination, the designed device exhibited a high detectivity of 1 × 1010 Jones, noise equivalent power of 1 × 10−12 WHz−1/2, and external quantum efficiency of 45,000%. The analysis revealed that the quality of the AlN buffer layer significantly improved the optoelectronic performance of the device.
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