The interplay of self-heating effects and static RTF in nanowire transistors

The purpose of this work is to present the results of our current investigations of the influence of the negatively charged trap on the magnitude of the on-current for the case when in addition to the short-range Coulomb interactions, self-heating effects are incorporated in the theoretical model. The nanowire FET being simulated in this work has gate oxide 0.8 nm thick and the BOX is 10 nm thick. The dimensions of the silicon nanowire are: 10 nm channel length, 7 nm channel thickness and 10 nm channel width. For the thermal conductivity, that appears in the acoustic phonons energy balance solvers, we have taken the value from Li Shi measurements that correspond to wire with cross-section of 7x10 nm.