Yuguo Tao, V. Upadhyaya, Ying-Yuan Huang, Chia-Wei Chen, Keenan I. Jones, A. Rohatgi
{"title":"载流子选择性隧道氧化物钝化接触实现21.4%效率的大面积n型硅太阳电池","authors":"Yuguo Tao, V. Upadhyaya, Ying-Yuan Huang, Chia-Wei Chen, Keenan I. Jones, A. Rohatgi","doi":"10.1109/PVSC.2016.7750103","DOIUrl":null,"url":null,"abstract":"This paper presents a thermally stable carrier selective back contact for high-efficiency large-area n-type Si solar cells with screen-printed front contact on homogeneous emitter. Our passivated contact structure is based on an ultra-thin (~15Å) tunnel oxide capped with phosphorus doped n+ poly-Si. It is shown that a proper precursor PH3/SiH4 ratio and an appropriate crystallization and dopant activation anneal temperature are vital to obtain excellent interface passivation quality with an implied open-circuit voltage (iVoc) of 728 mV and corresponding back-surface-fleld saturation current density (iJ0b') of ≤ 5 fA/cm2. It is found that the tunnel oxide is a critical part of this carrier selective contact, and its absence can result in ~125 mV drop in iVoc. Cell efficiency of 21.4% was achieved on 239 cm2 commercial grade n-type Cz wafers with screen-printed and fired Ag/Al front contact on ion-implanted homogeneous boron emitter. Detailed analysis of this cell shows that efficiency of this cell is mainly limited by the recombination at the front metal/p+ contacts. Our 2-dimentional simulations show that applying fine-line metallization on selectively doped boron emitter can raise this cell efficiency to over 22.5%.","PeriodicalId":6524,"journal":{"name":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","volume":"37 1","pages":"2531-2535"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"Carrier selective tunnel oxide passivated contact enabling 21.4% efficient large-area N-type silicon solar cells\",\"authors\":\"Yuguo Tao, V. Upadhyaya, Ying-Yuan Huang, Chia-Wei Chen, Keenan I. Jones, A. Rohatgi\",\"doi\":\"10.1109/PVSC.2016.7750103\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a thermally stable carrier selective back contact for high-efficiency large-area n-type Si solar cells with screen-printed front contact on homogeneous emitter. Our passivated contact structure is based on an ultra-thin (~15Å) tunnel oxide capped with phosphorus doped n+ poly-Si. It is shown that a proper precursor PH3/SiH4 ratio and an appropriate crystallization and dopant activation anneal temperature are vital to obtain excellent interface passivation quality with an implied open-circuit voltage (iVoc) of 728 mV and corresponding back-surface-fleld saturation current density (iJ0b') of ≤ 5 fA/cm2. It is found that the tunnel oxide is a critical part of this carrier selective contact, and its absence can result in ~125 mV drop in iVoc. Cell efficiency of 21.4% was achieved on 239 cm2 commercial grade n-type Cz wafers with screen-printed and fired Ag/Al front contact on ion-implanted homogeneous boron emitter. Detailed analysis of this cell shows that efficiency of this cell is mainly limited by the recombination at the front metal/p+ contacts. Our 2-dimentional simulations show that applying fine-line metallization on selectively doped boron emitter can raise this cell efficiency to over 22.5%.\",\"PeriodicalId\":6524,\"journal\":{\"name\":\"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)\",\"volume\":\"37 1\",\"pages\":\"2531-2535\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-06-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.2016.7750103\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.2016.7750103","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This paper presents a thermally stable carrier selective back contact for high-efficiency large-area n-type Si solar cells with screen-printed front contact on homogeneous emitter. Our passivated contact structure is based on an ultra-thin (~15Å) tunnel oxide capped with phosphorus doped n+ poly-Si. It is shown that a proper precursor PH3/SiH4 ratio and an appropriate crystallization and dopant activation anneal temperature are vital to obtain excellent interface passivation quality with an implied open-circuit voltage (iVoc) of 728 mV and corresponding back-surface-fleld saturation current density (iJ0b') of ≤ 5 fA/cm2. It is found that the tunnel oxide is a critical part of this carrier selective contact, and its absence can result in ~125 mV drop in iVoc. Cell efficiency of 21.4% was achieved on 239 cm2 commercial grade n-type Cz wafers with screen-printed and fired Ag/Al front contact on ion-implanted homogeneous boron emitter. Detailed analysis of this cell shows that efficiency of this cell is mainly limited by the recombination at the front metal/p+ contacts. Our 2-dimentional simulations show that applying fine-line metallization on selectively doped boron emitter can raise this cell efficiency to over 22.5%.