载流子选择性隧道氧化物钝化接触实现21.4%效率的大面积n型硅太阳电池

Yuguo Tao, V. Upadhyaya, Ying-Yuan Huang, Chia-Wei Chen, Keenan I. Jones, A. Rohatgi
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引用次数: 10

摘要

本文提出了一种热稳定载流子选择背触点的高效大面积n型硅太阳能电池,其前触点采用丝网印刷在均匀发射极上。我们的钝化接触结构是基于超薄(~15Å)隧道氧化物覆盖磷掺杂的n+多晶硅。结果表明,合适的前驱体PH3/SiH4比、合适的结晶温度和掺杂剂活化退火温度是获得良好的界面钝化质量的关键,其隐含开路电压(iVoc)为728 mV,相应的背表面场饱和电流密度(iJ0b’)≤5 fA/cm2。发现隧道氧化物是这种载流子选择性接触的关键部分,它的缺失可以导致iVoc下降~125 mV。在239 cm2的工业级n型Cz晶片上,在离子注入均匀硼发射极上采用丝网印刷和烧制银/铝正面接触,电池效率达到21.4%。对该电池的详细分析表明,该电池的效率主要受到前金属/p+接触处复合的限制。我们的二维模拟表明,在选择性掺杂硼发射极上应用细线金属化可以将电池效率提高到22.5%以上。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Carrier selective tunnel oxide passivated contact enabling 21.4% efficient large-area N-type silicon solar cells
This paper presents a thermally stable carrier selective back contact for high-efficiency large-area n-type Si solar cells with screen-printed front contact on homogeneous emitter. Our passivated contact structure is based on an ultra-thin (~15Å) tunnel oxide capped with phosphorus doped n+ poly-Si. It is shown that a proper precursor PH3/SiH4 ratio and an appropriate crystallization and dopant activation anneal temperature are vital to obtain excellent interface passivation quality with an implied open-circuit voltage (iVoc) of 728 mV and corresponding back-surface-fleld saturation current density (iJ0b') of ≤ 5 fA/cm2. It is found that the tunnel oxide is a critical part of this carrier selective contact, and its absence can result in ~125 mV drop in iVoc. Cell efficiency of 21.4% was achieved on 239 cm2 commercial grade n-type Cz wafers with screen-printed and fired Ag/Al front contact on ion-implanted homogeneous boron emitter. Detailed analysis of this cell shows that efficiency of this cell is mainly limited by the recombination at the front metal/p+ contacts. Our 2-dimentional simulations show that applying fine-line metallization on selectively doped boron emitter can raise this cell efficiency to over 22.5%.
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