磁性半导体隧道结中的自旋电流:外部偏置电压的影响

Thi Loan Nguyen, H. Drouhin, N. Hoai
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引用次数: 0

摘要

本文研究了施加偏置电压下GaMnAs/GaAs/GaMnAs磁性半导体隧道结中的自旋电流输运。采用30波段kp方法描述异质结构内的材料,结合了自旋轨道和交换相互作用。我们用传递矩阵的形式导出了波函数的数值解。在特定偏置值下,我们计算了自旋电流分量沿结构z方向的极化。我们展示了垂直于磁化强度的两个自旋电流分量的振荡,具有相等的极化幅度和特征周期。偏振幅值在10%左右变化,反映了这类材料的典型偏振。振荡周期(与自旋进动的拉莫尔频率有关)随偏置电压值的增大而增大。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Spin-current in a Magnetic Semiconductor Tunnel Junction: Effect of External Bias Voltage
This paper investigates spin-current transport in a GaMnAs/GaAs/GaMnAs magnetic semiconductor tunnel junctions under applied bias voltages. The 30-band k.p approach is used to describe the materials within the heterostructure, incorporating both spin-orbit and exchange interactions. We use the transfer-matrix formalism to derive numerical solutions for the wave functions. At specific bias values, we calculate the polarization of the spin-current component along the z direction of the structure. We show oscillations of the two spin-current components perpendicular to the magnetization with equal polarization amplitude and characteristic period. The polarization amplitude varies around 10%, reflecting the typical polarization in such type of material. The oscillation period - which relates to the Larmor frequency for spin precession - increases with the bias voltage values.
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