以Al和Ti为栅电极的sco基MIS结构的电学研究

2013 Spanish Conference on Electron Devices Pub Date : 2013-03-21 DOI:10.1109/CDE.2013.6481398

H. García, H. Castán, S. Dueñas, L. Bailón, P. C. Feijoo, M. Pampillón, E. Andrés

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摘要

本文对钴基MIS结构的电学性能进行了研究。采用高压溅射(HPS)法制备了高k薄膜。采用铝和钛作为栅电极。当腔压力增加时，氧化物内部的缺陷似乎减少了。然而，在这种情况下，泄漏电流密度增加。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Electrical study of ScO-based MIS structures using Al and Ti as gate electrodes

The electrical properties of ScO-based MIS structures have been electrically studied. The high-k films were deposited by high pressure sputtering (HPS). Aluminum and Ti were used as gate electrodes. Defects inside the oxide seem to be reduced when increasing the chamber pressure. However, leakage current density increases in this case.

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2013 Spanish Conference on Electron Devices

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