氧诱导的TiN/HfSiO栅层高钾降解

2012 IEEE Silicon Nanoelectronics Workshop (SNW) Pub Date : 2012-06-10 DOI:10.1109/SNW.2012.6243358

T. Hosoi, Y. Odake, K. Chikaraishi, H. Arimura, N. Kitano, T. Shimura, H. Watanabe

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引用次数: 2

摘要

我们研究了Hf在TiN/HfSiO栅堆中的扩散动力学。发现Hf向上扩散与界面SiO2的生长无关，但取决于栅堆中氧的含量。在650°C以上，Hf扩散到TiN电极，导致高k降解。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Oxygen-induced high-k degradation in TiN/HfSiO gate stacks

We have investigated the diffusion kinetics of Hf in TiN/HfSiO gate stacks. The Hf upward diffusion is found to be independent of interfacial SiO2 growth, but depends on the amount of oxygen in the gate stacks. It is also revealed that Hf diffusion into TiN electrode occurs at above 650°C and leads to high-k degradation.

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2012 IEEE Silicon Nanoelectronics Workshop (SNW)

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