热蒸发和硫化法制备二硫化锡薄膜

K. Lazar, V. Rigi, P. Hajara, P. Praveen, K. Saji
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引用次数: 1

摘要

二硫化锡(SnS2)是一种很有前途的二维层状金属二硫化物,具有优异的光学和电学性能。SnS2具有优异的电性能和低温可加工性,是一种很有前途的薄膜晶体管通道材料。本文主要研究了金属锡的热蒸发-硫化法制备二硫化锡SnS2薄膜的制备和表征。以氮气为载气,将前驱体锡(Sn)进行热蒸发,然后在硫粉存在下对锡(Sn)薄膜进行沉积后退火。在不同温度下进行硫后退火,使金属锡薄膜硫化,提高了相纯度。采用多种工艺对硫退火制备的高质量SnS2薄膜进行了分析。XRD数据和拉曼光谱揭示了SnS2薄膜的结构信息和振动模式。光学吸收研究表明,带隙为2.2 eV,与报道的SnS2薄膜值吻合良好。对热蒸发锡薄膜的硫退火工艺条件进行了优化,并考察了在低温下形成大面积均匀的SnS2二维材料的可能性。二硫化锡(SnS2)是一种很有前途的二维层状金属二硫化物,具有优异的光学和电学性能。SnS2具有优异的电性能和低温可加工性,是一种很有前途的薄膜晶体管通道材料。本文主要研究了金属锡的热蒸发-硫化法制备二硫化锡SnS2薄膜的制备和表征。以氮气为载气,将前驱体锡(Sn)进行热蒸发,然后在硫粉存在下对锡(Sn)薄膜进行沉积后退火。在不同温度下进行硫后退火,使金属锡薄膜硫化,提高了相纯度。采用多种工艺对硫退火制备的高质量SnS2薄膜进行了分析。XRD数据和拉曼光谱揭示了SnS2薄膜的结构信息和振动模式。光学吸收研究表明……
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Deposition of tin disulfide thin films by thermal evaporation and sulphurization
Tin disulfide (SnS2) is one of the promising two-dimensional (2D) layered metal dichalcogenide with excellent optical and electrical properties. Due to its excellent electrical performance and low temperature processibility, SnS2 turns out to be a promising channel material for thin film transistors. This work mainly focuses on deposition and characterisation of tin disulfide SnS2 thin films by thermal evaporation of metallic tin followed by sulphurization process. The synthesis incorporated thermal evaporation of precursor tin (Sn) followed by post deposition annealing of tin (Sn) films in the presence of sulphur powder with N2 as the carrier gas. The post sulphur annealing at various temperatures were done to sulphurise the metallic Sn thin films and to improve the phase purity. The high-quality SnS2 films formed by sulphur annealing were analyzed by various techniques. XRD data and Raman spectrum revealed the structural information and vibrational modes of SnS2 films. Optical absorption studies showed a band gap of 2.2 eV, in well agreement with the reported values of SnS2 thin films. The conditions for the sulphur annealing process of thermally evaporated Sn films were optimized and examined the possibility of forming a SnS2 2D material at low temperature with large area uniformity.Tin disulfide (SnS2) is one of the promising two-dimensional (2D) layered metal dichalcogenide with excellent optical and electrical properties. Due to its excellent electrical performance and low temperature processibility, SnS2 turns out to be a promising channel material for thin film transistors. This work mainly focuses on deposition and characterisation of tin disulfide SnS2 thin films by thermal evaporation of metallic tin followed by sulphurization process. The synthesis incorporated thermal evaporation of precursor tin (Sn) followed by post deposition annealing of tin (Sn) films in the presence of sulphur powder with N2 as the carrier gas. The post sulphur annealing at various temperatures were done to sulphurise the metallic Sn thin films and to improve the phase purity. The high-quality SnS2 films formed by sulphur annealing were analyzed by various techniques. XRD data and Raman spectrum revealed the structural information and vibrational modes of SnS2 films. Optical absorption studies showed ...
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