新型镍前驱体的合成及PEALD评价

2021 IEEE International Interconnect Technology Conference (IITC) Pub Date : 2014-05-20 DOI:10.1109/IITC.2014.6831859

S. Gatineau, Changhee Ko, J. Gatineau, Clément Lansalot-Matras, Chang-Fang Hsiao

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引用次数: 1

摘要

基于烯丙基和烷基吡啶胺配体[Ni(烯丙基)(PCAI-R)]的新型无氧无氟镍(Ni)前驱体，以H2/NH3为还原剂，开发并评价了热等离子体增强ALD的Ni金属膜。以Ni(烯丙基)(PCAI-iPr)为原料，在400℃下通过PEALD得到电阻率极低的纯Ni膜(5.3 μO·cm)，接近体镍的电阻率值(5-10 μO·cm)[1]。

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Synthesis and PEALD evaluation of new Nickel precursors

A new family of oxygen and fluorine free Nickel (Ni) precursors, which are based on allyl and alkylpyrrolylimine ligands [Ni(allyl)(PCAI-R)], has been developed and evaluated for a Ni metal film with thermal and plasma enhanced ALD using H₂/NH₃ as a reducing agent. From Ni(allyl)(PCAI-iPr), pure Ni film with very low resistivity (5.3 μO·cm) was obtained at 400°C by PEALD, which is close to the resistivity value of bulk Nickel (5-10 μO·cm) [1].

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2021 IEEE International Interconnect Technology Conference (IITC)

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