Yao‐Feng Chang, Yen‐Ting Chen, F. Xue, Yanzhen Wang, F. Zhou, B. Fowler, J. Lee
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引用次数: 9
摘要
研究了硅氧基互补电阻开关(CRS)忆阻器的电学特性。发现TaN/SiO2/n++ si衬底CRS记忆电阻器的沉积后退火(PDA: 500°C 5min in O2)减少了器件特性的操作变化，并提高了重复开关时的电稳定性。在这项工作中，我们还研究了扫描极性，工作温度，电极材料和尺寸缩放的影响。我们的实验结果不仅为基于siox的CRS存储器的优化提供了额外的见解，而且有助于构建开关机制的物理图景。
Study of SiOx-based complementary resistive switching memristor
The electrical characteristics of SiOx-based complementary resistive switching (CRS) memristor have been investigated. Post-deposition annealing (PDA: 500°C 5min in O2) of TaN/SiO2/n++ Si-substrate CRS memristor has been found to reduce operational variation in device characteristics, as well as improve the electrical stability during repeated switching. In this work, we have also studied the effects of sweeping polarity, operating temperature, electrode material and dimension scaling. Our experimental results not only provide additional insights into optimization of the SiOx-based CRS memory but also help in constructing a physical picture for the switching mechanism.
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