相移光刻掩模图样设计

International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI:10.1109/IEDM.1991.235426

K. Nakagawa, Y. Yanagishita, N. Ishiwata, Y. Tabata

{"title":"相移光刻掩模图样设计","authors":"K. Nakagawa, Y. Yanagishita, N. Ishiwata, Y. Tabata","doi":"10.1109/IEDM.1991.235426","DOIUrl":null,"url":null,"abstract":"The authors have developed a mask pattern designing algorithm for a phase-shift lithography process. This algorithm produces pattern dimension linearity regardless of the pattern size and does not requires any special CAD (computer-aided design) technique. The authors also developed a mask fabrication technique with self-aligned shifters. One can avoid the alignment problem of chromium and shifter pattern by the self-aligning mask process.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"22 1","pages":"51-54"},"PeriodicalIF":0.0000,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Mask pattern designing for phase-shift lithography\",\"authors\":\"K. Nakagawa, Y. Yanagishita, N. Ishiwata, Y. Tabata\",\"doi\":\"10.1109/IEDM.1991.235426\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The authors have developed a mask pattern designing algorithm for a phase-shift lithography process. This algorithm produces pattern dimension linearity regardless of the pattern size and does not requires any special CAD (computer-aided design) technique. The authors also developed a mask fabrication technique with self-aligned shifters. One can avoid the alignment problem of chromium and shifter pattern by the self-aligning mask process.<<ETX>>\",\"PeriodicalId\":13885,\"journal\":{\"name\":\"International Electron Devices Meeting 1991 [Technical Digest]\",\"volume\":\"22 1\",\"pages\":\"51-54\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-12-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Electron Devices Meeting 1991 [Technical Digest]\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1991.235426\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Electron Devices Meeting 1991 [Technical Digest]","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1991.235426","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 5

摘要

作者开发了一种用于相移光刻工艺的掩模图案设计算法。该算法不需要任何特殊的CAD(计算机辅助设计)技术，可以产生与图案尺寸无关的图案尺寸线性。作者还开发了一种自对准移位器的掩模制造技术。采用自对准掩模工艺可以避免铬与移位图案的对准问题。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Mask pattern designing for phase-shift lithography

The authors have developed a mask pattern designing algorithm for a phase-shift lithography process. This algorithm produces pattern dimension linearity regardless of the pattern size and does not requires any special CAD (computer-aided design) technique. The authors also developed a mask fabrication technique with self-aligned shifters. One can avoid the alignment problem of chromium and shifter pattern by the self-aligning mask process.<>

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

International Electron Devices Meeting 1991 [Technical Digest]

自引率

0.00%

发文量