界面态对三极mosfet工艺变异性的影响

2012 IEEE Silicon Nanoelectronics Workshop (SNW) Pub Date : 2012-06-10 DOI:10.1109/SNW.2012.6243295

E. González-Marín, F. Ruiz, A. Godoy, I. M. Tienda-Luna, F. Gámiz

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引用次数: 1

摘要

这项工作研究了界面状态对Trigate mosfet性能的影响，特别是对亚阈值摆幅(SS)和阈值电压(VT)可变性的影响。为此，开发了二维Schrödinger-Poisson耦合方程系统的求解器，包括界面状态(Dit)的影响。考虑了不同的Dit(E)轮廓，分析了它们对几种器件几何形状的影响。

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Effect of interfacial states on the technological variability of trigate MOSFETs

This work studies the influence of the interfacial states on the performance of Trigate MOSFETs and, specifically, on the Subthreshold Swing (SS) and threshold voltage (VT) variability. To do so, a solver for the 2D Schrödinger-Poisson coupled equation system has been developed, including the effects of interfacial states (Dit). Different Dit(E) profiles have been considered, analyzing their influence for several device geometries.

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2012 IEEE Silicon Nanoelectronics Workshop (SNW)

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