迈向数据可靠的基于横条的记忆存储器

A. Ghofrani, M. Lastras-Montaño, K. Cheng
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引用次数: 31

摘要

忆阻器件的一系列突破已经证明了使用基于交叉棒的忆阻阵列作为超高密度和低功耗存储器的潜力。然而,它们独特的设备特性可能会导致读写操作的数据干扰,从而导致严重的数据可靠性问题。本文详细讨论了这些可靠性问题,并提出了一个全面而低面积/性能/能量开销的解决方案来解决这些问题。提出的解决方案采用不对称电压来限制干扰,插入冗余来检测干扰,并采用刷新机制来恢复被削弱的数据。一个案例研究的结果表明,在一个基准的不可靠内存系统上,实现数据可靠性所需的面积、性能和能耗的平均开销分别为3%、4%和19%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Towards data reliable crossbar-based memristive memories
A series of breakthroughs in memristive devices have demonstrated the potential of using crossbar-based memristor arrays as ultra-high-density and low-power memory. However, their unique device characteristics could cause data disturbance for both read and write operations resulting in serious data reliability problems. This paper discusses such reliability issues in detail and proposes a comprehensive yet low area-/performance-/energy-overhead solution addressing these problems. The proposed solution applies asymmetric voltages for disturbance confinement, inserts redundancy for disturbance detection, and employs a refreshing mechanism to restore weakened data. The results of a case study show that the average overheads of area, performance and energy consumption for achieving data reliability, over a baseline unreliable memory system, are 3%, 4%, and 19% respectively.
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