p/sup +/多晶硅双栅薄膜SOI mosfet分析

International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI:10.1109/IEDM.1991.235330

T. Tanaka, H. Horie, S. Ando, S. Hijiya

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引用次数: 49

摘要

作者利用晶圆键合技术制备了平面p/sup +/多晶硅双栅薄膜SOI(绝缘体上硅)nmosfet。制造的器件显示出跨导，Gm，超过单栅极SOI-MOSFET的两倍。结果表明，双栅SOI MOSFET的导通是由完全平坦的电位和电荷注入引起的。作者建立的分析模型显示出的电特性与所制备器件的电特性非常吻合。

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Analysis of p/sup +/ poly Si double-gate thin-film SOI MOSFETs

The authors have fabricated planar p/sup +/ poly Si double-gate thin-film SOI (silicon-on-insulator) nMOSFETs using wafer bonding. The fabricated devices have shown a transconductance, Gm, exceeding twice that of the single-gate SOI-MOSFET. It was confirmed that conduction in the double-gate SOI MOSFET originates from a fully flat potential and charge injection. An analytical model developed by the authors has displayed electrical characteristics that agree well with those of the fabricated devices.<>

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来源期刊

International Electron Devices Meeting 1991 [Technical Digest]

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