背面两相冷却的三维芯片和存储器堆内流动和热分布分析

B. d'Entremont, J. Marcinichen, J. Thome
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引用次数: 0

摘要

通过硅通孔实现多个堆叠硅芯片的三维集成已被认为是集成电路设计的一个可能的未来方向。然而,与以前的架构相比,3d - ic从概念的那一刻起就需要广泛关注热管理。虽然这种堆叠通常与集成的层间冷却解决方案相关联,但可以想象,单个微通道蒸发器可能提供更简单的冷却解决方案,以支持中等尺寸的堆叠,特别是如果由50 μm厚度的模具制成,现在可以制造。本研究针对6层堆叠进行了此类解决方案的探索,重点研究了层间热点放置与微蒸发器两相冷却及通道间流量分布的相互作用。模拟代码是基于许多实验证明的方法,可以很好地适用于目前小尺寸的通道和流体。研究表明,这种配置是可行的,但需要仔细考虑热点放置的影响,以产生良好的微蒸发器性能和安全冷却的电气元件。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Analysis of flow and heat distribution in a 3D stack of chips and memories with back side two-phase cooling
Three-dimensional integration of multiple stacked silicon dies using Through-Silicon Vias has been recognized as a likely future direction of integrated circuit design. Yet, in contrast to previous architectures such 3D-ICs require extensive attention to thermal management from the moment of conception. Although such stacks are often associated with integrated, interlayer cooling solutions, it is conceivable that a single microchannel evaporator might provide a simpler cooling solution to support a stack of modest size, especially if made from dies of 50-μm thickness, that are now feasible to manufacture. The current study explores such a solution for a stack of 6 layers, focusing on the interaction of hot spot placement among the layers with the two-phase cooling and flow distribution among the channels of the micro-evaporator. The simulation code is based on numerous methods proven experimentally to work well for the present small size of channels and fluid. The study suggests that such configurations are feasible, yet require careful consideration of the effect of hot spot placement to yield good micro-evaporator performance and safe cooling of the electrical components.
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