熔融InGaAs/Si雪崩光电二极管的暗电流减小

LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242) Pub Date : 2001-11-12 DOI:10.1109/LEOS.2001.969043

Y. Kang, P. Mages, A. Pauchard, A. Clawson, S. Lau, Y. Lo, P. Yu

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引用次数: 7

摘要

在n型Si衬底上制备了直径为130 /spl mu/m的熔融InGaAs/Si分离吸收倍增apd。与已发表的熔融InGaAs/Si apd的数据相比，已经实现了实质性的暗电流降低。据报道，暗电流密度低至0.23 mA/cm/sup 2/在-5 V和3 mA/cm/sup 2/增益为10时。尽管我们改进的暗电流仍然比传统的台面结构InGaAs/InP APD大2个数量级，但由于Si的电子和空穴电离系数之间的较大差异，预计会降低多余的噪声水平。

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Dark current reduction in fused InGaAs/Si avalanche photodiode

Mesa type fused InGaAs/Si separated absorption and multiplication APDs with a diameter of 130 /spl mu/m have been fabricated on n-type Si substrate. Substantial dark current reduction has been achieved compared with the published data for fused InGaAs/Si APDs. Dark current densities as low as 0.23 mA/cm/sup 2/ at -5 V and 3 mA/cm/sup 2/ at a gain of 10 are reported. Our improved dark current even though is still 2 orders larger than the conventional mesa-structure InGaAs/InP APD lower excess noise level is expected due to the larger difference between the electron and hole ionization coefficients of Si.

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LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)

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