钠石灰玻璃衬底镍合金电极上溶胶-凝胶PZT薄膜的微观结构和铁电性能

T. Ogawa, N. Ujiie, K. Hukuta
{"title":"钠石灰玻璃衬底镍合金电极上溶胶-凝胶PZT薄膜的微观结构和铁电性能","authors":"T. Ogawa, N. Ujiie, K. Hukuta","doi":"10.1109/ISAF.1996.602788","DOIUrl":null,"url":null,"abstract":"The Ni alloy electrode was used for a bottom electrode of PZT thin films prepared by sol-gel process. Although BaTiO/sub 3/ films had consisted of a perovskite single phase, PZT films were composed of a perovskite phase with second phases of Pb/sub 3/O/sub 4/ and ZrTiO/sub 4/ on the alloy electrode. In order to prevent the second phases forming, the heat treatment time of the electrode was increased to obtain the thicker Al/sub 2/O/sub 3/ layer on the alloy electrode. The second phases decreased with increasing the heat treatment time, however, the phases did not disappear. When BaTiO/sub 3/ films were inserted between the electrodes and PZT films, the grain growth of PZT films was promoted by the existence of the BaTiO/sub 3/ buffer layer, finally, the PZT single phase was obtained. As the tan /spl delta/ of the films decreased with decreasing the amount of the second phases, it became 3.9%, the film of which possessed a remanent polarization of 20 /spl mu/C/cm/sup 2/.","PeriodicalId":14772,"journal":{"name":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","volume":"18 1","pages":"459-462 vol.1"},"PeriodicalIF":0.0000,"publicationDate":"1996-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Microstructure and ferroelectric properties of sol-gel PZT thin films on nickel alloy electrode for use with soda-lime glass substrate\",\"authors\":\"T. Ogawa, N. Ujiie, K. Hukuta\",\"doi\":\"10.1109/ISAF.1996.602788\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The Ni alloy electrode was used for a bottom electrode of PZT thin films prepared by sol-gel process. Although BaTiO/sub 3/ films had consisted of a perovskite single phase, PZT films were composed of a perovskite phase with second phases of Pb/sub 3/O/sub 4/ and ZrTiO/sub 4/ on the alloy electrode. In order to prevent the second phases forming, the heat treatment time of the electrode was increased to obtain the thicker Al/sub 2/O/sub 3/ layer on the alloy electrode. The second phases decreased with increasing the heat treatment time, however, the phases did not disappear. When BaTiO/sub 3/ films were inserted between the electrodes and PZT films, the grain growth of PZT films was promoted by the existence of the BaTiO/sub 3/ buffer layer, finally, the PZT single phase was obtained. As the tan /spl delta/ of the films decreased with decreasing the amount of the second phases, it became 3.9%, the film of which possessed a remanent polarization of 20 /spl mu/C/cm/sup 2/.\",\"PeriodicalId\":14772,\"journal\":{\"name\":\"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics\",\"volume\":\"18 1\",\"pages\":\"459-462 vol.1\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-08-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISAF.1996.602788\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAF.1996.602788","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

采用镍合金电极作为溶胶-凝胶法制备PZT薄膜的底电极。虽然BaTiO/sub 3/薄膜是由钙钛矿单相组成,但PZT薄膜是由钙钛矿相和第二相Pb/sub 3/O/sub 4/和ZrTiO/sub 4/组成的。为了防止第二相的形成,增加了电极的热处理时间,在合金电极上获得较厚的Al/sub 2/O/sub 3/层。第二相随着热处理时间的延长而减少,但没有完全消失。当在PZT薄膜与电极之间插入BaTiO/sub 3/薄膜时,BaTiO/sub 3/缓冲层的存在促进了PZT薄膜的晶粒生长,最终得到PZT单相。随着第二相用量的减少,薄膜的tan /spl δ /减小,为3.9%,残余极化为20 /spl mu/C/cm/sup 2/。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Microstructure and ferroelectric properties of sol-gel PZT thin films on nickel alloy electrode for use with soda-lime glass substrate
The Ni alloy electrode was used for a bottom electrode of PZT thin films prepared by sol-gel process. Although BaTiO/sub 3/ films had consisted of a perovskite single phase, PZT films were composed of a perovskite phase with second phases of Pb/sub 3/O/sub 4/ and ZrTiO/sub 4/ on the alloy electrode. In order to prevent the second phases forming, the heat treatment time of the electrode was increased to obtain the thicker Al/sub 2/O/sub 3/ layer on the alloy electrode. The second phases decreased with increasing the heat treatment time, however, the phases did not disappear. When BaTiO/sub 3/ films were inserted between the electrodes and PZT films, the grain growth of PZT films was promoted by the existence of the BaTiO/sub 3/ buffer layer, finally, the PZT single phase was obtained. As the tan /spl delta/ of the films decreased with decreasing the amount of the second phases, it became 3.9%, the film of which possessed a remanent polarization of 20 /spl mu/C/cm/sup 2/.
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